MRAM Reliability

Spintronics-based memory is considered as a potential alternative to replace CMOS based memory. Spin-transfer torque MRAM (STT-MRAM) have the advantages of low power consumption, however, suffer from poor reliability and low yield. This work in collaboration with researchers from Beihang University, China aims to investigate the reliability and performance issues of STT-MRAMs taking into account the process, voltage and temperature variations. This work is funded by Campus France Chateaubriand Fellowship Programme.